Self-aligned process for nanotube/nanowire FETs

Self-aligned process for nanotube/nanowire FETs

A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the...

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Bibliographische Detailangaben
Hauptverfasser: AVOURIS PHAEDON, DETAVERNIER CHRISTOPHER G. M. M, LAVOIE CHRISTIAN, WONG HON-SUM PHILIP, CHEN JIA, CARRUTHERS ROY A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.