Semiconductor device

A semiconductor device which can achieve high breakdown voltage and high ESD tolerance of a current drive output terminal at the same time, and can quicken the response speed of a current flowing through the current drive output terminal. The inventive semiconductor device is provided, between the c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	KATAOKA SHINICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device which can achieve high breakdown voltage and high ESD tolerance of a current drive output terminal at the same time, and can quicken the response speed of a current flowing through the current drive output terminal. The inventive semiconductor device is provided, between the current drive output terminal and a first transistor or a low breakdown voltage element, with a second transistor having a breakdown voltage higher than that of the first transistor or that of the low breakdown voltage element. Furthermore, the inventive semiconductor device is provided with a diode having an anode connected with a path between the first transistor or the low breakdown voltage element and the second transistor, and a cathode connected with an ESD protection circuit.