Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a g...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a glass-ceramic layer. |
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