Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TERRIS BRUCE DAVID, SUN JONATHAN ZANHONG, SLONCZEWSKI JOHN CASIMIR, ALLENSPACH ROLF, PARKIN STUART STEPHEN PAPWORTH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.