Method of thinning a semiconductor substrate

A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier sub...

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Bibliographische Detailangaben
Hauptverfasser:	KRYWANCZYK TIMOTHY C, NEARY TIMOTHY E, CODDING STEVEN R, SPROGIS EDMUND J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.