N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films

A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

Bibliographische Detailangaben

Hauptverfasser:	SMITH PATRICIA BEAUREGARD, AJMERA SAMEER KUMAR, JIN CHANGMING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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