N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films

N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films

A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

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Bibliographische Detailangaben
Hauptverfasser: SMITH PATRICIA BEAUREGARD, AJMERA SAMEER KUMAR, JIN CHANGMING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.