N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films

A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

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Hauptverfasser:	SMITH PATRICIA BEAUREGARD, AJMERA SAMEER KUMAR, JIN CHANGMING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SMITH PATRICIA BEAUREGARD AJMERA SAMEER KUMAR JIN CHANGMING
description	A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.
format	Patent
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films
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