Extremely high-speed switchmode DC-DC converters

Switchmode DC-DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III-V compound semiconductor devices such as gallium ars...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	MCCUNE, JR. EARL WILLIAM
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS,e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USERAPPLICATIONS CONTROL OR REGULATION THEREOF CONTROLLING CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERATION PHYSICS REGULATING SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Switchmode DC-DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III-V compound semiconductor devices such as gallium arsenide (GaAs) metal-semiconductor field effect transistors (MESFETs) or heterostructure FETs such as high electron mobility transistors (HEMTs). According to an embodiment of the invention, the low figure of merit (FoM), τFET, of the non-Silicon-based switching transistors allows the converters of the present invention to be employed in envelope tracking amplifier circuits of wireless devices designed for high-bandwidth technologies such as, for example, EDGE and UMTS, thereby improving the efficiency and battery saving capabilities of the wireless devices.