Manufacture of cadmium mercury telluride on patterned silicon
This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one...
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| creator | BUCKLE LOUISE HALL DAVID J CAIRNS JOHN W GRAHAM ANDREW HAILS JANET E HOLLIER COLIN J WRIGHT ANDREW J GIESS JEAN GORDON NEIL T PRYCE GRAHAM J |
| description | This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7892879B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7892879B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7892879B23</originalsourceid><addsrcrecordid>eNrjZLD1TcwrTUtMLiktSlXIT1NITkzJzSzNVchNLUouLapUKEnNySktykwBSuYpFCSWlKQW5aWmKBRn5mQm5-fxMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GBzC0sjC3NLJyNjIpQAAPzZMJA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacture of cadmium mercury telluride on patterned silicon</title><source>esp@cenet</source><creator>BUCKLE LOUISE ; HALL DAVID J ; CAIRNS JOHN W ; GRAHAM ANDREW ; HAILS JANET E ; HOLLIER COLIN J ; WRIGHT ANDREW J ; GIESS JEAN ; GORDON NEIL T ; PRYCE GRAHAM J</creator><creatorcontrib>BUCKLE LOUISE ; HALL DAVID J ; CAIRNS JOHN W ; GRAHAM ANDREW ; HAILS JANET E ; HOLLIER COLIN J ; WRIGHT ANDREW J ; GIESS JEAN ; GORDON NEIL T ; PRYCE GRAHAM J</creatorcontrib><description>This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110222&DB=EPODOC&CC=US&NR=7892879B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110222&DB=EPODOC&CC=US&NR=7892879B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BUCKLE LOUISE</creatorcontrib><creatorcontrib>HALL DAVID J</creatorcontrib><creatorcontrib>CAIRNS JOHN W</creatorcontrib><creatorcontrib>GRAHAM ANDREW</creatorcontrib><creatorcontrib>HAILS JANET E</creatorcontrib><creatorcontrib>HOLLIER COLIN J</creatorcontrib><creatorcontrib>WRIGHT ANDREW J</creatorcontrib><creatorcontrib>GIESS JEAN</creatorcontrib><creatorcontrib>GORDON NEIL T</creatorcontrib><creatorcontrib>PRYCE GRAHAM J</creatorcontrib><title>Manufacture of cadmium mercury telluride on patterned silicon</title><description>This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1TcwrTUtMLiktSlXIT1NITkzJzSzNVchNLUouLapUKEnNySktykwBSuYpFCSWlKQW5aWmKBRn5mQm5-fxMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GBzC0sjC3NLJyNjIpQAAPzZMJA</recordid><startdate>20110222</startdate><enddate>20110222</enddate><creator>BUCKLE LOUISE</creator><creator>HALL DAVID J</creator><creator>CAIRNS JOHN W</creator><creator>GRAHAM ANDREW</creator><creator>HAILS JANET E</creator><creator>HOLLIER COLIN J</creator><creator>WRIGHT ANDREW J</creator><creator>GIESS JEAN</creator><creator>GORDON NEIL T</creator><creator>PRYCE GRAHAM J</creator><scope>EVB</scope></search><sort><creationdate>20110222</creationdate><title>Manufacture of cadmium mercury telluride on patterned silicon</title><author>BUCKLE LOUISE ; HALL DAVID J ; CAIRNS JOHN W ; GRAHAM ANDREW ; HAILS JANET E ; HOLLIER COLIN J ; WRIGHT ANDREW J ; GIESS JEAN ; GORDON NEIL T ; PRYCE GRAHAM J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7892879B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>BUCKLE LOUISE</creatorcontrib><creatorcontrib>HALL DAVID J</creatorcontrib><creatorcontrib>CAIRNS JOHN W</creatorcontrib><creatorcontrib>GRAHAM ANDREW</creatorcontrib><creatorcontrib>HAILS JANET E</creatorcontrib><creatorcontrib>HOLLIER COLIN J</creatorcontrib><creatorcontrib>WRIGHT ANDREW J</creatorcontrib><creatorcontrib>GIESS JEAN</creatorcontrib><creatorcontrib>GORDON NEIL T</creatorcontrib><creatorcontrib>PRYCE GRAHAM J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BUCKLE LOUISE</au><au>HALL DAVID J</au><au>CAIRNS JOHN W</au><au>GRAHAM ANDREW</au><au>HAILS JANET E</au><au>HOLLIER COLIN J</au><au>WRIGHT ANDREW J</au><au>GIESS JEAN</au><au>GORDON NEIL T</au><au>PRYCE GRAHAM J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacture of cadmium mercury telluride on patterned silicon</title><date>2011-02-22</date><risdate>2011</risdate><abstract>This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Manufacture of cadmium mercury telluride on patterned silicon |
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