Manufacture of cadmium mercury telluride on patterned silicon

Manufacture of cadmium mercury telluride on patterned silicon

This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BUCKLE LOUISE, HALL DAVID J, CAIRNS JOHN W, GRAHAM ANDREW, HAILS JANET E, HOLLIER COLIN J, WRIGHT ANDREW J, GIESS JEAN, GORDON NEIL T, PRYCE GRAHAM J
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.