Method of producing large area SiC substrates

Method of producing large area SiC substrates

A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wa...

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Bibliographische Detailangaben
Hauptverfasser: KNIGHT THOMAS J, SINGH NARSINGH BAHADUR, WAGNER BRIAN P, HEDRICK JERRY W, FITELSON MICHAEL M, KNUTESON DAVID J, BERGHMANS ANDRE E, AUMER MICHAEL, SHERWIN MARC E, USEFARA MARK S, KAHLER DAVID, MCLAUGHLIN SEAN, RANDALL TRAVIS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.