Method of forming CMOS transistor

A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is perfor...

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Bibliographische Detailangaben

Hauptverfasser:	LIN YU-MING, HUANG CHENG-TUNG, WU MENG-YI, TU SHIH-JUNG, TING SHYH-FANN, LEE KUN-HSIEN, JENG LI-SHIAN, CHENG YAOIN, HUNG WEN-HAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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