Method of forming CMOS transistor

Method of forming CMOS transistor

A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is perfor...

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Bibliographische Detailangaben
Hauptverfasser: LIN YU-MING, HUANG CHENG-TUNG, WU MENG-YI, TU SHIH-JUNG, TING SHYH-FANN, LEE KUN-HSIEN, JENG LI-SHIAN, CHENG YAOIN, HUNG WEN-HAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.