Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure

Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure

A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be fo...

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Hauptverfasser: CHOI HYUN-MIN, LEE SEUNG-HWAN, WI SUNG-REY, MAEDA SHIGENOBU, WANGXIAO QUAN, SHIN HEON-JONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHOI HYUN-MIN
LEE SEUNG-HWAN
WI SUNG-REY
MAEDA SHIGENOBU
WANGXIAO QUAN
SHIN HEON-JONG
description A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure
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