Semiconductor device having nitride semiconductor layer
A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor r...
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| Zusammenfassung: | A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes. |
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