Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices

Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices

Methods of forming metal silicide layers. The methods include: forming a silicon-rich layer between dielectric layers; contacting the silicon-rich layer with a metal layer and heating the silicon rich-layer and the metal layer to diffuse metal atoms from the metal layer into the silicon layer to for...

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Bibliographische Detailangaben
Hauptverfasser: ANDERSON FELIX PATRICK, WHITE ERIC JEFFREY, MCDEVIN THOMAS LEDDY, HE ZHONG-XIANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods of forming metal silicide layers. The methods include: forming a silicon-rich layer between dielectric layers; contacting the silicon-rich layer with a metal layer and heating the silicon rich-layer and the metal layer to diffuse metal atoms from the metal layer into the silicon layer to form a metal silicide layer.