High dielectric capacitor materials and method of their production

Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which...

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Bibliographische Detailangaben
Hauptverfasser: BERGHMANS ANDRE, TALVACCHIO JOHN J, SHERWIN MARC, SINGH NARSINGH B, KAHLER DAVID, ADAM JOHN D, KNUTESON DAVID J, WAGNER BRIAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.