Pixel with transfer gate with no isolation edge

Pixel with transfer gate with no isolation edge

A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

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Bibliographische Detailangaben
1. Verfasser: MCKEE JEFFREY A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.