Semiconductor device including capacitor including upper electrode covered with high density insulation film and production method thereof

A semiconductor device includes a lower electrode provided on a semiconductor substrate, an upper electrode provided on the lower electrode to overlap a part of the lower electrode, a first insulating film provided between the lower electrode and the upper electrode, and a second insulating film pro...

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Bibliographische Detailangaben
Hauptverfasser: TAKEWAKI TOSHIYUKI, OSHIDA DAISUKE, ONUMA TAKUJI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a lower electrode provided on a semiconductor substrate, an upper electrode provided on the lower electrode to overlap a part of the lower electrode, a first insulating film provided between the lower electrode and the upper electrode, and a second insulating film provided in contact with an upper part of the upper electrode and on the upper part of the lower electrode, and having a density higher than that of the first insulating film, the second insulating film covering a side surface and a top surface of the upper electrode.