Semiconductor device and semiconductor product
The embodiments discussed herein reduce, in a semiconductor device having a ferroelectric capacitor, the film thickness of an interlayer insulation film covering the ferroelectric capacitor without degrading yield, and reduce the invasion of water into the ferroelectric capacitor. A semiconductor de...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The embodiments discussed herein reduce, in a semiconductor device having a ferroelectric capacitor, the film thickness of an interlayer insulation film covering the ferroelectric capacitor without degrading yield, and reduce the invasion of water into the ferroelectric capacitor. A semiconductor device includes a first interlayer insulation film formed on a substrate, a ferroelectric capacitor formed on the first interlayer insulation film, a second interlayer insulation film formed on the first interlayer insulation film so as to cover the ferroelectric capacitor, and a hydrogen barrier film formed on the second interlayer insulation film, the ferroelectric capacitor is formed of a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film in contact therewith, and a polish-resistant film formed on the upper electrode, wherein the second interlayer insulation film covers the polish-resistant film with a film thickness of 50-100 nm. |
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