Method of forming a semiconductor device having trench charge compensation regions
In one embodiment, a method of forming a semiconductor device with trench charge compensation structures includes exposing the trench sidewalls to a reduced temperature hydrogen desorption process to enhance the formation of monocrystalline semiconductor layers.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In one embodiment, a method of forming a semiconductor device with trench charge compensation structures includes exposing the trench sidewalls to a reduced temperature hydrogen desorption process to enhance the formation of monocrystalline semiconductor layers. |
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