Buried semiconductor laser and method for manufacturing the same

A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to bilaterally disposed on both sides of the active layer; a clad layer provided so as to cover the active layer and the block layers; and a p-type gallium indium arsenide (InGaAs) contact layer provided on the clad layer, wherein the p-type InGaAs contact layer has a compressive strain.