Semiconductor device having interlayer insulating film covered with hydrogen diffusion barrier film and its manufacture method

An interlayer insulating film made of insulating material is formed on a semiconductor substrate. A hydrogen diffusion barrier film is formed on the interlayer insulating film, the hydrogen diffusion barrier film being made of material having a higher hydrogen diffusion barrier function than a hydrogen diffusion barrier function of material of the interlayer insulating film. The semiconductor substrate formed with the interlayer insulating film and hydrogen diffusion barrier film is thermally treated. In the process of forming the interlayer insulating film, the interlayer insulating film is formed under the condition that a moisture content becomes 5×10−3 g/cm3 or lower. Even if annealing is performed after the hydrogen diffusion barrier film is formed, a crack is hard to be formed in the underlying interlayer insulating film.