Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing

Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing

Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ROBISON RODNEY L, TRICKETT DOUGLAS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.