Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode

Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode

Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

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Bibliographische Detailangaben
Hauptverfasser: FORSTER JOHN C, PIPITONE JOHN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SWITCHES
ELECTRICITY
EMERGENCY PROTECTIVE DEVICES
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
RELAYS
SELECTORS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.