Semiconductor device having an electrode pad, a bump provided above the electrode pad and a bump foundation layer therebetween

Semiconductor device having an electrode pad, a bump provided above the electrode pad and a bump foundation layer therebetween

When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al-Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KURITA TAKAKI, OKAMOTO TADAHIRO, MAKINO YUTAKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al-Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.