Shapes-based migration of aluminum designs to copper damascene

Shapes-based migration of aluminum designs to copper damascene

An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.

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Bibliographische Detailangaben
Hauptverfasser: HALL EZRA D. B, DUNHAM TIMOTHY G, LANDIS HOWARD S, LAVIN MARK A, LEIPOLD WILLIAM C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.