Manufacturing method of semiconductor laser devices and manufacturing apparatus of the same

The present invention is to provide a semiconductor laser device manufacturing method for realizing highly reliable semiconductor laser devices. The semiconductor laser device manufacturing method includes: cutting a wafer into bar-shaped wafers by scanning an electron beam on the front side of the wafer on which a semiconductor laser structure has been formed so as to cause cracks which trigger the cutting of the wafer; and depositing front and back coating films on the end faces, which have been newly exposed by the cutting of the wafer, of the cut wafers. In the method the cut wafers are transferred in a non-ambient atmosphere at a time between the cutting of the wafer and the depositing of the end face coating films.