CMOS image sensor

Disclosed are a CMOS image sensor and a method for manufacturing the same. The CMOS image sensor includes a photodiode area and a floating diffusion area formed on a semiconductor substrate, a transistor formed on the semiconductor substrate between the photodiode area and the floating diffusion are...

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Bibliographische Detailangaben
1. Verfasser: LIM KEUN HYUK
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed are a CMOS image sensor and a method for manufacturing the same. The CMOS image sensor includes a photodiode area and a floating diffusion area formed on a semiconductor substrate, a transistor formed on the semiconductor substrate between the photodiode area and the floating diffusion area, an isolation layer formed below the transistor, and a channel area formed between the transistor and the isolation layer.