Wide-bandgap semiconductor devices

Wide-bandgap semiconductor devices

A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the II...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NG HOCK MIN, FRAHM ROBERT, VYAS BRIJESH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.