Method for programming a memory device suitable to minimize floating gate coupling and memory device

Embodiment of a method for programming a memory device of the type comprising a matrix of memory cells divided in buffers of cells capacitively uncoupled from each other, the method comprising: first programming of said cells belonging to a buffer; second programming of said cells belonging to said buffer; said step of first programming occurs with a ramp gate voltage having first pitch and programs said cells of said buffer with higher threshold distribution and said step of second programming occurs with a ramp gate voltage having pitch lower than the pitch.