Method of fabricating semiconductor device
A method of forming a semiconductor device that includes heating a wafer on which an Al-Cu sputtering thin film is formed before patterning the Al-Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a semiconductor device that includes heating a wafer on which an Al-Cu sputtering thin film is formed before patterning the Al-Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C. and 600° C. The process temperature in heating the process wafer is not higher than the flow temperature of aluminum or is the temperature at which a reflow process can be performed. |
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