Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure

Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure

A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repa...

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Bibliographische Detailangaben
Hauptverfasser: MARTELLONI YANNICK, DI RONZA MARIO
Format: Patent
Sprache:eng
Schlagworte:
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repair approach with a word oriented redundancy repair approach. A Memory Built-In Self Repair (MBISR) device comprises at least one memory (2) with row and/or column redundancy, at least one row and/or column Memory Built-In Self Repair (MBISR) circuit (3), and a word redundancy block (4). Furthermore, a distributed MBISR structure as well as dedicated Column/Row MBISR circuits (3) are provided.