Method for producing masks for photolithography and the use of such masks

A mask for photolithography methods comprises opaque and transparent areas as well as a surface structure. For the contact with a substrate (10) to be exposed at least a few opaque areas are incorporated and at least a few transparent areas are arranged in a spaced fashion and are deep-etched down t...

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Bibliographische Detailangaben
Hauptverfasser:	LANKER MICHAEL, WIKI MAX
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS
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Beschreibung
Zusammenfassung:	A mask for photolithography methods comprises opaque and transparent areas as well as a surface structure. For the contact with a substrate (10) to be exposed at least a few opaque areas are incorporated and at least a few transparent areas are arranged in a spaced fashion and are deep-etched down to a structural depth. In a further embodiment at least one transparent area is designed as a positively resting area (12). The structural depth in the deep-etched areas is greater than the thickness of the surface structure, at least greater than or equal to 1 mum.