Method for fabricating semiconductor element
A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal treatment to the semiconductor wafer at least once, wherein the high-temperature thermal treatment compr...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal treatment to the semiconductor wafer at least once, wherein the high-temperature thermal treatment comprises a final high-temperature treatment, which is carried out lastly as the high-temperature thermal treatment; lowering a temperature of the semiconductor wafer, following the final high-temperature treatment, to a predetermined lower temperature; and exposing the semiconductor wafer to an oxidizing atmosphere after the temperature lowering process. |
|---|