TaN integrated circuit (IC) capacitor

TaN integrated circuit (IC) capacitor

A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride...

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Bibliographische Detailangaben
Hauptverfasser: LAFFERTY EVELYN ANNE, PAVONE SALVATORE FRANK, HARAKAS GEORGE NICHOLAS, HUBER MICHAEL LEROY, HENDY GREGORY LEE, KLAWINSKY JAMES WAYNE, HAZELTON COURTNEY MICHAEL, PASKER BLAKE RYAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.