Technique for forming a copper-based contact layer without a terminal metal

Technique for forming a copper-based contact layer without a terminal metal

By directly forming an underbump metallization layer on a copper-based contact region, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be impro...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JUNGNICKEL GOTTHARD, LEHR MATTHIAS, KUECHENMEISTER FRANK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:By directly forming an underbump metallization layer on a copper-based contact region, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may significantly be reduced.