Method of programming memory device

In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical pote...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAZA SWAROOP, VANBUSKIRK MICHAEL, FANG TZU-NING
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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