Method of programming memory device
In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical pote...
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| Zusammenfassung: | In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical potential across the electrodes in one direction, and may be programmed in the electronic charge carrier mode by applying electrical potential across electrodes in the opposite direction. |
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