Method of programming memory device

Method of programming memory device

In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical pote...

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Hauptverfasser: KAZA SWAROOP, VANBUSKIRK MICHAEL, FANG TZU-NING
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator KAZA SWAROOP
VANBUSKIRK MICHAEL
FANG TZU-NING
description In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical potential across the electrodes in one direction, and may be programmed in the electronic charge carrier mode by applying electrical potential across electrodes in the opposite direction.
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STATIC STORES
title Method of programming memory device
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