Film bulk acoustic resonator (FBAR) devices with temperature compensation

The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electr...

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Bibliographische Detailangaben
Hauptverfasser:	ROGERS CARRIE A, GRANNEN KEVIN J, LEE DONALD E, CHOY JOHN, FENG HONGJUN, SRIDHARAN URUPATTUR C, LARSON, III JOHN D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.