Semiconductive device fabricated using a raised layer to silicide the gate

In one aspect, the invention provides a method of fabricating a semiconductive device 200 that comprises forming a raised layer [510] adjacent a gate [340] and over a source/drain [415], depositing a silicidation layer [915] over the gate [340] and the raised layer [510], and moving at least a porti...

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Bibliographische Detailangaben
Hauptverfasser: KOHLI PUNEET, RAMIN MANFRED B
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one aspect, the invention provides a method of fabricating a semiconductive device 200 that comprises forming a raised layer [510] adjacent a gate [340] and over a source/drain [415], depositing a silicidation layer [915] over the gate [340] and the raised layer [510], and moving at least a portion of the silicidation layer [915] into the source/drain [415] through the raised layer [510].