Dummy via for reducing proximity effect and method of using the same

Dummy via for reducing proximity effect and method of using the same

A dummy via design for a dual damascene structure has a dielectric layer on a substrate, a dual damascene structure filled with a conductive material and inlaid in the dielectric layer, and a dummy via structure filled with a non-conductive material and inlaid in the dielectric layer. The dummy via...

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Bibliographische Detailangaben
Hauptverfasser: HUANG SSUIA, WANG CHIH-YANG, HUANG KUNNG, TSENG HUANI, YOU JHYN, LIU KUAN-MIAO, CHEN TSONG-YUAN, TSAI TIN-LIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A dummy via design for a dual damascene structure has a dielectric layer on a substrate, a dual damascene structure filled with a conductive material and inlaid in the dielectric layer, and a dummy via structure filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at least two dummy vias filled with the non-conductive material and located adjacent to two sides of the dual damascene structure respectively.