Gate structure and method

A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.

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Bibliographische Detailangaben
Hauptverfasser:	MERCER DOUGLAS E, KHAMANKAR RAJESH, COLOMBO LUIGI, VISOKAY MARK R, ROTONDARO ANTONIO L. P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.