Method of manufacturing nitride-based semiconductor light emitting device

Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.