Entire encapsulation of Cu interconnects using self-aligned CuSiN film

Entire encapsulation of Cu interconnects using self-aligned CuSiN film

A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer...

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Bibliographische Detailangaben
Hauptverfasser: LIEW SAN LEONG, ZHANG BEI CHAO, CHEN TONG QING, WIDODO JOHNNY, SUDIJONO JOHN, HSIA LIANG CHOO, SIEW YONG KONG, ZHANG FAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.