Method for selective removal of a layer

A method for forming a semiconductor device includes forming a liner over a semiconductor material including a control electrode. The method further includes forming a first spacer adjacent to the control electrode, wherein the first spacer has a first width. The method further includes implanting current electrode dopants. The method further includes removing the first spacer. The method further includes forming a second spacer adjacent the control electrode, wherein the second spacer has a second width and wherein the second width is less than the first width. The method further includes using the second spacer as a protective mask to selectively remove the liner. The method further includes forming a stressor layer overlying the control electrode and current electrode regions.