CMOS active pixel sensor with improved dynamic range and method of operation

A CMOS imaging array includes a plurality of individual pixels arranged in rows and columns. Each pixel is constructed the same and includes a photodetector (e.g., photodiode) receiving incident light and generating an output. A first, relatively lower gain, wide dynamic range amplifier circuit is p...

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1. Verfasser: FARRIER MICHAEL
Format: Patent
Sprache:eng
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Zusammenfassung:A CMOS imaging array includes a plurality of individual pixels arranged in rows and columns. Each pixel is constructed the same and includes a photodetector (e.g., photodiode) receiving incident light and generating an output. A first, relatively lower gain, wide dynamic range amplifier circuit is provided responsive to the output of the photodetector. The first circuit is optimized for a linear response to high light level input signals. A second, relatively higher gain, lower dynamic range amplifier circuit is also provided which is responsive to the output of the photodetector. The second circuit is optimized to provide a high signal to noise ratio for low light level input signals. A first output select circuit is provided for directing the output of the first circuit to a first output multiplexer. A second output select circuit is provided for directing the output of the second circuit to a second output multiplexer. Thus, separate outputs of the first and second circuits are provided for each of the individual pixel sensors of the CMOS imaging array. Alternative embodiments incorporate two ore more photodetectors and two or more amplifier circuits and output select circuits. Three photodetectors and three amplifier circuits are useful for an embodiment where the sensor includes a three-color filter matrix.