Phase change random access memory

A phase change memory device with a reduced phase change volume and lower drive current and a method for forming the same are provided. The method includes forming a bottom insulating layer comprising a bottom electrode contact, forming a bottom electrode film on the bottom electrode contact, forming an anti-reflective coating (ARC) film on the bottom electrode film, patterning and etching the ARC film and the bottom electrode film to form a bottom electrode comprising a side edge, and forming a phase change material portion on the ARC film and the bottom insulating layer, wherein the phase change material portion physically contacts the side edge of the bottom electrode. The method further includes forming a top electrode on the phase change material portion, and forming a top electrode contact on the top electrode.